石墨烯
氮化硼
材料科学
化学气相沉积
结晶度
纳米技术
异质结
化学工程
同轴
复合材料
光电子学
电气工程
工程类
作者
Masakiyo Kato,Tsuyoshi Inoue,Yi Ling Chiew,Yungkai Chou,Masashi Nakatake,Shoichi Takakura,Yoshio Watanabe,Kazu Suenaga,Yoshihiro Kobayashi
标识
DOI:10.35848/1882-0786/acbd0e
摘要
Abstract We develop a high-temperature chemical vapor deposition of highly crystalline graphene on the surface of boron nitride nanotubes (BNNTs). The growth of few-layer graphene flakes on BNNT templates was confirmed by scanning transmission electron microscopy. Based on an investigation of the effect of growth temperature and growth time on defect density, graphene with a relatively high crystallinity was obtained at 1350 °C. The absence of undesirable alterations in the BNNT lattice during graphene growth was verified by multiple analyses. The high-temperature growth of heterolayers would assist in the advancement of nanodevices that coaxially combine graphene and boron nitride.
科研通智能强力驱动
Strongly Powered by AbleSci AI