电致发光
量子阱
光电子学
发光二极管
热离子发射
光致发光
材料科学
二极管
波长
宽禁带半导体
光学
电子
物理
纳米技术
激光器
量子力学
图层(电子)
作者
Saulius Marcinkevičius,Jacob Ewing,Rinat Yapparov,Feng Wu,Shuji Nakamura,James S. Speck
摘要
Hole injection through V-defect sidewalls into all quantum wells (QWs) of long wavelength GaN light emitting diodes had previously been proposed as means to increase efficiency of these devices. In this work, we directly tested the viability of this injection mechanism by electroluminescence and time-resolved photoluminescence measurements on a device in which QW furthest away from the p-side of the structure was deeper, thus serving as an optical detector for presence of injected electron–hole pairs. Emission from the detector well confirmed that, indeed, the holes were injected into this QW, which could only take place through the 101¯1 V-defect sidewalls. Unlike direct interwell transport by thermionic emission, this transport mechanism allows populating all QWs of a multiple QW structure despite the high potential barriers in the long wavelength InGaN/GaN QWs.
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