A mathematical model for predicting the electro-mechanical behavior of crack-based flexible strain sensor

材料科学 复合材料 导电体 聚二甲基硅氧烷 灵敏度(控制系统) 应变能密度函数 压力(语言学) 碳纳米管 断裂力学 拉伤 有限元法 结构工程 电子工程 医学 语言学 哲学 内科学 工程类
作者
Zhenya Song,Qi Li,Yabin Yan,Yang Gao,Fu‐Zhen Xuan
出处
期刊:Applied Physics Letters [American Institute of Physics]
卷期号:123 (15)
标识
DOI:10.1063/5.0166461
摘要

Crack-based flexible strain sensor generally shows significantly high sensitivity due to crack propagation induced conductive path reduction during stretching. To quantitatively analyze the relationship among strain, crack density, and device sensitivity, an electro-mechanical mathematical model is developed for investigating the performance of a carbon nanotube-silicon oxide/polydimethylsiloxane (CNT-SiOx/PDMS) based crack strain sensor. Strength and energy criteria are used to predict the crack density for SiOx/PDMS under different strains. The results are utilized with the probability distribution based cellular automata method to determine the crack distribution for further electrical analysis, which is related to the conductive and non-conductive classification of elements. Finally, the potential distribution for whole elements is calculated, leading to the investigation of sensitivity toward the CNT-SiOx/PDMS based strain sensor. The maximum predicted crack density of the SiOx/PDMS can reach 41.36 × 10−3 μm−1 under 60% tensile strain with a deviation of 5.23% compared to the experimental data. Correspondingly, the maximum predicted sensitivity of the device can reach 512.81 at a SiOx thickness of 3.93 μm, with the deviation of 9.25%. Based on the predicted results, it can be concluded that crack density affects the distribution and quantity of conductive elements. When stress is applied to the device, the crack density increases, and the conductive elements located in the crack area undergo a disconnection process, resulting a significant reduction in the conductive path and a rapid increase in sensitivity for strain sensor.
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