Electro-Thermal Device-Package Co-Design for Ultra-Wide Bandgap Gallium Oxide Power Devices

The ultra-wide bandgap (UWBG) of Ga2O 3 allows it to achieve over nearly 1033-times lower intrinsic carrier concentration than silicon (Si), permitting Ga2O 3 devices to operate at much higher temperatures. However, its low thermal conductivity and the associated self-heating could cause the device to exceed its safe operating temperature as prescribed by the gate dielectric, device passivation, and packaging material limitations. The objective of this study is to develop an electro-thermal device-package co-design modeling framework for Ga2O 3 power semiconductors. A series of models were built to integrate the physics-based material/device-level model with a package-level thermal finite element analysis (FEA) model. These models were then evaluated against more traditional methods of device and package simulation to understand the potential benefits of such a method.