Influence of Silicon-Based Photoelectric Material Spectral Characteristics on Radiation Spectroscopy Thermometry

To research the influence of the photoelectric response characteristics of radiation thermometry, a high-temperature blackbody radiation spectrum measurement experimental system is built by using the standard blackbody furnace, optical-fiber spectrometer with silicon-based photoelectric detection material. By setting different integration times of the spectrometer, the standard blackbody radiation spectrum measurement at different temperatures is carried out. The influence of the photoelectric response characteristics parameters is analyzed in detail. Therefore, the linear range between fitting band and spectral response intensity of radiation spectrum thermometry parameters is optimized. On this basis, through the standard blackbody radiation temperature measurement, the influence of the optimal parameter fitting band and the linear interval of spectral response intensity on the radiation temperature measurement results are verified. The influence of the mentioned photoelectric detection response characteristics on the spectral radiation thermometry has an important reference value for improving the accuracy of the spectral radiation thermometry.