纳米团簇
材料科学
氧气
纳米技术
光电子学
化学工程
化学
有机化学
工程类
作者
Shicheng Liu,Xiangyu Chen,Junbo Yu,Na Li,Qulan Zhou
摘要
The oxygen vacancies in Cu@CeO 2 -OVs significantly increase the interfacial electron density, promote electron transfer and intermediate stability, thereby reducing the C–C coupling energy barrier and achieving highly selective C 2 H 4 generation.
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