光电探测器
紫外线
红外线的
宽带
光电子学
材料科学
波长
光学
薄膜
纳米技术
物理
作者
Feng Zhou,Siyuan Yu,Xuanqi Zhong,Haiting Zhang,Xiaoxian Song
标识
DOI:10.1016/j.snr.2025.100372
摘要
• The first demonstration of a 2H-phase MoTe₂ photodetector achieving continuous photoresponse from ultraviolet (375 nm) to short-wave infrared (1550 nm), enabled by layer-dependent bandgap engineering. • Density functional theory (DFT) calculations reveal the critical role of reduced bandgap in multilayer MoTe₂ (down to 0.74 eV for bilayers) for efficient SWIR detection, validated by dual-band (375 nm/1550 nm) imaging of the “HIT” pattern. • Successful integration with a high-precision scanning platform demonstrates the device’s spatial resolution and multispectral compatibility, highlighting its potential for real-world applications in imaging and sensing. A high-performance 2H-phase MoTe₂ photodetector with an ultra-broadband spectral response spanning from ultraviolet (375 nm) to short-wavelength infrared (1550 nm) is reported, enabled by layer-dependent bandgap modulation. The device exhibits exceptional optoelectronic metrics, including a fast response time (80 μs), high responsivity (5.04 A/W), and specific detectivity (>3.0 × 10⁹ Jones). First-principles calculations reveal the critical role of reduced bandgap in multilayer MoTe₂ (down to 0.74 eV for bilayer structures) in facilitating efficient SWIR detection. Experimental validation through dual-band (375 nm/1550 nm) imaging of the “HIT” pattern confirms its spatial resolution and multispectral compatibility, highlighting its potential in next-generation optoelectronic systems for optical communication, environmental sensing, and integrated photonic circuits.
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