Molecular Beam Epitaxy Scalable Growth of Wafer‐Scale Continuous Semiconducting Monolayer MoTe2 on Inert Amorphous Dielectrics

Abstract Monolayer MoTe 2 , with the narrowest direct bandgap of ≈1.1 eV among Mo‐ and W‐based transition metal dichalcogenides, has attracted increasing attention as a promising candidate for applications in novel near‐infrared electronics and optoelectronics. Realizing 2D lateral growth is an essential prerequisite for uniform thickness and property control over the large scale, while it is not successful yet. Here, layer‐by‐layer growth of 2 in. wafer‐scale continuous monolayer 2H‐MoTe 2 films on inert SiO 2 dielectrics by molecular beam epitaxy is reported. A single‐step Mo‐flux controlled nucleation and growth process is developed to suppress island growth. Atomically flat 2H‐MoTe 2 with 100% monolayer coverage is successfully grown on inert 2 in. SiO 2 /Si wafer, which exhibits highly uniform in‐plane structural continuity and excellent phonon‐limited carrier transport behavior. The dynamics‐controlled growth recipe is also extended to fabricate continuous monolayer 2H‐MoTe 2 on atomic‐layer‐deposited Al 2 O 3 dielectric. With the breakthrough in growth of wafer‐scale continuous 2H‐MoTe 2 monolayers on device compatible dielectrics, batch fabrication of high‐mobility monolayer 2H‐MoTe 2 field‐effect transistors and the three‐level integration of vertically stacked monolayer 2H‐MoTe 2 transistor arrays for 3D circuitry are successfully demonstrated. This work provides novel insights into the scalable synthesis of monolayer 2H‐MoTe 2 films on universal substrates and paves the way for the ultimate miniaturization of electronics.