沉积(地质)
图层(电子)
原子层外延
逐层
化学气相沉积
化学工程
作者
Andrew L. Johnson,James D. Parish
出处
期刊:Organometallic chemistry
日期:2018-11-16
卷期号:: 1-53
被引量:3
标识
DOI:10.1039/9781788010672-00001
摘要
One field of organometallic and materials chemistry that has seen great advancements over the last 20 years is that of atomic layer deposition (ALD), and in particular the development of precursors for the deposition of thin films of highly functional materials. This review focuses on newly developed ALD precursors for metals and metalloid elements (Groups I to XV). New precursors are necessary for a wide range of both established and emerging high-tech applications. A brief overview of recent advances in precursor chemistry is given.
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