材料科学
金属有机气相外延
沟槽
蚀刻(微加工)
基质(水族馆)
化学气相沉积
成核
各向同性腐蚀
光电子学
干法蚀刻
原位
沉积(地质)
纳米技术
图层(电子)
外延
化学
地质学
有机化学
古生物学
海洋学
生物
沉积物
作者
Young Dae Cho,In Geun Lee,Joo Hee Lee,Sun Wook Kim,Cheung Soo Shin,Won Kyu Park,Chung Yi Kim,Dae Hyun Kim,Dae Hong Ko
摘要
We here introduce a novel in situ anisotropic etching process to form a V-grooved trench platform on a patterned Si (001) substrate in a metal-organic chemical vapor deposition (MOCVD) reactor. Such V-grooved trenches were realized by in situ baking of a Ga-exposed Si surface at 760°C in a H2/AsH3 atmosphere of 160 mbar in the reactor. The anisotropic etching during this process forms V-grooves of (111)-terminated Si stems. The result is closely related to the so-called melt-back etch process on the surface of a Ga-Si bond with an AsH3 gas. Furthermore, no signature Ga-As from Si precipitation remains on the etched Si surface after the process, and trench volumes can be controlled by increasing the bake time. As a result, this process enables the formation of patterned V-grooved Si trenches, which is critical to uniformly nucleate III-V material in nano-dimensional device integration without prerequisites such as a chemical process.
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