谐振器
Q系数
电介质
质量(理念)
对称(几何)
诺共振
偶极子
光电子学
砷化镓
领域(数学)
光学
等离子体子
共振(粒子物理)
物理
量子力学
原子物理学
几何学
数学
纯数学
作者
Salvatore Campione,Sheng Liu,Lorena I. Basilio,Larry K. Warne,William L. Langston,Ting S. Luk,Joel R. Wendt,J. L. Reno,Gordon A. Keeler,Igal Brener,Michael B. Sinclair
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2016-10-25
卷期号:3 (12): 2362-2367
被引量:383
标识
DOI:10.1021/acsphotonics.6b00556
摘要
We present a new approach to dielectric metasurface design that relies on a single resonator per unit cell and produces robust, high quality factor Fano resonances. Our approach utilizes symmetry breaking of highly symmetric resonator geometries, such as cubes, to induce couplings between the otherwise orthogonal resonator modes. In particular, we design perturbations that couple “bright” dipole modes to “dark” dipole modes whose radiative decay is suppressed by local field effects in the array. Our approach is widely scalable from the near-infrared to radio frequencies. We first unravel the Fano resonance behavior through numerical simulations of a germanium resonator-based metasurface that achieves a quality factor of ∼1300 at ∼10.8 μm. Then, we present two experimental demonstrations operating in the near-infrared (∼1 μm): a silicon-based implementation that achieves a quality factor of ∼350; and a gallium arsenide-based structure that achieves a quality factor of ∼600, the highest near-infrared quality factor experimentally demonstrated to date with this kind of metasurface. Importantly, large electromagnetic field enhancements appear within the resonators at the Fano resonant frequencies. We envision that combining high quality factor, high field enhancement resonances with nonlinear and active/gain materials such as gallium arsenide will lead to new classes of active optical devices.
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