Amorphous Silicon Thin Film Transistor Structure for Effectively Suppressing Backlight Illumination Effect

The amorphous silicon thin film transistor (a-Si:H TFT) structure for effectively suppressing backlight illumination effect is proposed in this paper.The properties of the carrier transport in the regions of source,drain contact and channel are analyzed in detail.The mechanism of effectively suppressing of the rise in TFT off-current under backlight illumination is demonstrated.The effect of a-Si:H film thickness on the TFT off/on-current in investigated.The static charateristics of the a-Si:H TFT in the darkness and under backlight illumination are determined.