A 300V Thin Layer SOI RESURF nLDMOS with Multiple Field Plates

A 300Vthin-layer SOI RESURF nLDMOS with multiple field plates(MFP)was proposed,in which RESURF and MFP technology were used to modulate electric field distribution on the device surface and improve breakdown voltage of the device.Structural parameters of the device were analyzed to achieve a trade-off between breakdown voltage and specific on-resistance.Compared with conventional structures,the proposed 300VnLDMOS device achieved high breakdown voltage with a simple and low cost fabrication process.