兴奋剂
纳米晶
材料科学
能量转移
纳米技术
纳米颗粒
化学物理
光电子学
化学工程
化学
工程类
作者
Hsiang‐Yun Chen,Sourav Maiti,Dong Hee Son
出处
期刊:ACS Nano
[American Chemical Society]
日期:2011-12-18
卷期号:6 (1): 583-591
被引量:185
摘要
Dynamics of energy transfer and charge carrier localization in Mn-doped CdS/ZnS core/shell nanocrystals correlated with doping location and concentration are studied via transient absorption measurement of exciton relaxation dynamics. The strong dependence of exciton-Mn energy transfer rate on doping location was directly resolved in the transient bleach recovery and electron intraband absorption data by using layer-by-layer synthesized Mn-doped nanocrystals. With 1.2 nm decrease in doping radius in the ZnS shell, energy transfer rate increases by 6 fold. We identified that hole trapping is the major competing process that inhibits the energy transfer in Mn-doped CdS/ZnS nanocrystals. From the branching ratio of the energy transfer and hole trapping, combined with luminescence quantum yield measurement, we also obtained doping location-dependent radiative relaxation quantum yield of Mn(2+) ions that is as high as 0.95.
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