Structural and Magnetic Properties of Ni81Fe19 Thin Film Grown on Si(001) Substrate via Single Graphene Layer

We prepared magnetic thin films Ni 81 Fe 19 on single‐crystal Si(001) substrates via single graphene layer through magnetron sputtering for Ni 81 Fe 19 and chemical vapor deposition for graphene. Structural investigation showed that crystal quality of Ni 81 Fe 19 thin films was significantly improved with insertion of graphene layer compared with that directly grown on Si(001) substrate. Furthermore, saturation magnetization of Ni 81 Fe 19 /graphene/Si(001) heterostructure increased to 477 emu/cm 3 with annealing temperature T a = 400°C, which is much higher than values of Ni 81 Fe 19 /Si(001) heterostructures with T a ranging from 200°C to 400°C.