An Improved SiC MOSFET With Integrated Schottky Contact Super Barrier Rectifier

This study focuses on the SiC MOSFET with integrated Schottky contact super barrier rectifier (SiC SSBR-MOSFET) through the application of TCAD simulation methodologies. During its operation as a freewheeling diode, the parasitic bipolar body diode’s activity is effectively suppressed as the SSBR has a lower turn-on voltage. Thus, the problem of bipolar degradation is entirely mitigated. Furthermore, the SiC SSBR-MOSFET demonstrates outstanding dynamic performance. In contrast to the conventional SiC MOSFET (SiC C-MOSFET), it exhibits decrease in input capacitance ( $C_{\mathrm {ISS}}$ ), reverse transfer capacitance ( $C_{\mathrm {RSS}}$ ), gate charge ( $Q_{\mathrm {G}}$ ) and gate-to-drain charge ( $Q_{\mathrm {GD}}$ ) by approximately 2, 6, 2 and 12 times, respectively. Despite a slight increase in specific on-resistance ( $R_{\mathrm {ON\cdot SP}}$ ), the SiC SSBR-MOSFET’s figures of merit, including $R_{\mathrm {ON\cdot SP}}\times Q_{\mathrm {G}}$ and $R_{\mathrm {ON\cdot SP}}\times Q_{\mathrm {GD}}$ , are significantly enhanced, reducing by 1.8 and 11 times, respectively. The SiC SSBR-MOSFET’s exceptional performance and straightforward implementation render it highly appealing for advanced power electronics applications.