High-performance bifunctional near-infrared diode enabled by intentional manipulation of energy transfer and carrier injection with a hetero-active-layer

A hetero-diode based on FAPbI 3 /CdSe QDs is developed, and the QDs exhibit efficient FRET to FAPbI 3 . The hole injection barrier, due to the deeper valence band of the QDs, regulates the number of holes, resulting in more balanced carrier injection.