相位噪声
环形振荡器
dBc公司
注入锁定
静脉曲张
CMOS芯片
电气工程
材料科学
电容器
压控振荡器
光电子学
电子工程
电压
工程类
物理
电容
电极
光学
量子力学
激光器
作者
Nadia Gargouri,Mounir Samet,Zied Sakka
标识
DOI:10.1109/setit54465.2022.9875516
摘要
This paper presents an Injection Locked Ring Oscillator (ILRO) for use in biomedical implants applications. A pulse injection locking method has been desired for ring oscillator performance enhancement and phase noise cancellation. In addition, the frequency is controlled independently of the biasing circuit using an inversion mode MOS voltage controlled capacitor (varactor).Designed in a 0.18-μm CMOS, this ILRO works inthe ISM band of 902–928 GHz and consumes a lowpower of 4.62 mW under 1.8V power supply. The phase noise of -121.6dBc /Hz at 1MHzoffset frequency was obtained at 76 MHz inputinjection pulse.The proposed circuit can achieve a FoM of -174.19 dBc/Hz.
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