Chemical vapor deposition of doped graphene: exploring the role of solid, liquid, and gas precursors in tailoring properties

Abstract Graphene is an atomically thin material composed of a single layer of carbon atoms arranged in a hexagonal lattice, which exhibits unique electrical, thermal, and mechanical properties. The intentional introduction of foreign atoms into the structure of graphene by doping is a powerful approach for modifying these properties, making graphene suitable for a range of advanced applications. Among the various synthesis techniques, chemical vapor deposition (CVD) is particularly effective for doping because it allows precise control over the growth conditions and dopant incorporation, outperforming other synthesis strategies in terms of scalability, uniformity, and clean growth. This review examines how solid, liquid, and gaseous precursor types play crucial roles in CVD doping, directly affecting the growth dynamics, doping efficiency, and material quality. By analyzing the mechanisms associated with each precursor form, this review highlights how these strategies address the challenges of achieving consistent and high-quality doped graphene. This discussion provides valuable insight into advancing CVD techniques for producing doped graphene with enhanced properties for cutting-edge applications.