材料科学
热电效应
兴奋剂
功率因数
热电材料
塞贝克系数
光电子学
工程物理
功率(物理)
复合材料
热导率
热力学
物理
工程类
作者
Elsammani Ali Shokralla,Arslan Ashfaq,Hind Alqurashi,Lamiaa G. Alharbe,Eddie Gazo Hanna,Mohamed Abdelsabour Fahmy,Romulo R. Macadangdang,Salhah Hamed Alrefaee,Rasmiah S. Almufarij,A.R. Abd-Elwahed
标识
DOI:10.1016/j.ceramint.2024.06.200
摘要
In this study, we have investigated the effect of strontium (Sr) doping on the thermoelectric properties of thin films made of tin telluride (SnTe). The preparation of Sn1-xSrxTe (x = 0, 0.1, 0.2, 0.3, 0.4) films using a straightforward thermal evaporation method and subjected them to post-annealing at 773 K. The surface morphology and crystal structure of the films have been examined by using SEM and XRD, respectively. Our findings indicate that the Seebeck coefficient value increased from 39 to 68 μV/K as the Sr doping concentration increased. This enhancement has been attributed to the energy filtering effect resulting from charge carrier dislocation. However, the electrical conductivity value decreased due to an increase in defect density. The maximum enhancement of the power factor has been observed for x = 0.3, where the value reached 38.9 μWcm−1K−2, which is greater than the pristine sample. Our results conclude that Sr0.3 doping in Sn0.7Te is a valuable addition for thermoelectric applications at room temperature. Additionally, the use of the simple thermal evaporation method for film preparation highlights its potential for large-scale applications.
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