Experimental Demonstration of the Improved Single-Event Irradiation Hardness of Split-Gate 4H-SiC Power MOSFET With Integrated the P+N+ Structure

In this work, the robust single-event irradiation-hardened capability is demonstrated in a novel 4H-SiC split gate integrated PN MOSFET (SGPN-MOSFET). The gate of the proposed SiC MOSFET was split and N+/P+ layers were implanted, resulting in the fast removal of excess holes accumulated in the JFET region under a high electric field. Thereby, it reduces the localized electric field at the drift/substrate interface and the maximum global temperature. Experiment results show that the single event leakage current (SELC) threshold voltage of the hardened structure is 40% higher than that of the conventional SiC planar MOSFET under heavy ion linear energy transfer (LET) value of 40 MeV $\cdot $ cm2/mg.