Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

In this study, 490 nm thin tin selenide thin films were deposited by facile co-evaporation techniques using Sn and Se sources on a clean glass substrate. The thin films were annealed at moderate annealing temperature followed by characterization and analysis. The thin annealed films possess polycrystalline nature and orthorhombic structure with an average grain size of 130 nm. The band gap assessed from absorption spectra for the highly annealed sample was 1.52 eV. The resistivity and sheet resistance were measured with four-probe techniques and the sheet resistance was =1.362 × 104 ohm for the highly annealed film.