Effect of Bismuth Additives on the Kinetics and Mechanism of As2Se3 Glass Crystallization

The comparative analysis of the kinetics of the bulk crystallization of AsSe1.5Bix glasses (х = 0, 0.01, and 0.05) in the temperature range 210–260°C is conducted by the data of density measurement using the generalized Kolmogorov–Avrami equation and the results of phase and differential thermal analysis. The kinetics of the surface crystallization of As2Se3 glass containing 0.4 at % Bi at 270 and 310°C and the parameters of the specific electrical conductivity and microhardness of the quenched semiconducting glass-ceramics at different stages of thermal treatment are studied.