极紫外光刻
光学
材料科学
进程窗口
平版印刷术
光圈(计算机存储器)
数值孔径
光刻
窗口(计算)
光电子学
计算机科学
工程类
波长
物理
机械工程
操作系统
作者
Markus P. Benk,Weilun Chao,Ryan Miyakawa,Kenneth A. Goldberg,Patrick Naulleau
摘要
Mask 3D effects are an area of active research in EUV mask technology. Mask-side numerical aperture, illumination, feature size and absorber thickness are key factors modulating mask 3D effects and affecting printability and process window. Variable mask-side NA and flexible illumination make the SHARP actinic EUV microscope a powerful instrument for the study of mask 3D effects. We show an application example, comparing mask 3D effects for a standard Tantalum Nitride absorber and a thinner, 40-nm Nickel absorber. Data is presented for 0.33 4xNA and anamorphic 0.55 4x/8xNA. The influence of different illumination settings on mask 3D effects is discussed.
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