纳米线
材料科学
碳化硅
纳米技术
纳米材料
小型化
透射电子显微镜
光电子学
辐照
质子
聚焦离子束
复合材料
离子
化学
物理
有机化学
核物理学
量子力学
作者
Muhammad Rashid Khan,Ishaq Ahmad,Muhammad Abdullah Khan,Tarıq Iqbal,Fabian I. Ezema,M. Maaza
出处
期刊:Current Nanoscience
[Bentham Science]
日期:2018-07-23
卷期号:14 (5): 354-359
被引量:8
标识
DOI:10.2174/1573413714666180328153514
摘要
Background: Joining nanosized building blocks is a promising approach to fabricate functional nanodevices and nanosystems. Nanojoining approach also helps in integrating these nanodevices and nanosystems for the miniaturization of devices. The nanodevices are mainly fabricated by joining metallic and semiconductor nanowires/nanotubes. Objective: Silicon Carbide Nanowires (SiC-NWs) have become important nanomaterials for future nanoscale devices due to their unique physical properties. Method: In this paper, nanowelding of SiC-NWs has been demonstrated using ion beam technology. SiC-NWs were irradiated by 5 MeV proton beam as per SRIM code simulation. Nanojoining of SiC-NWs was confirmed by scanning electron microscopy, transmission electron microscopy and X-ray diffraction. Conclusion: Joining of individual SiC-NWs by 5 MeV proton beam irradiation was successfully achieved at the contact point as X-, Y-, II-, and T-shaped welded junctions.
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