Study by simulation of the SnO2 and ZnO anti-reflection layers in n-SiC/p-SiC solar cells

Recently, Two technologies of the photovoltaic cells are present today namely the cells crystalline (polycrystalline and monocrystalline) and the cell thin layers. The development of the solar cells requires a technological change of materials used in their manufacturing. The thin layers are parts of these materials and which announced their effectiveness and growth of output of the solar cell. The aim of this paper article is to the study and simulation of photovoltaic cells containing SiC materials. This material is have important having a part in the development of renewable energies. Based on the SCAPS (a Solar Cell Capacitance Simulator) simulation, the obtained results are Vco, Jsc, FF and the output energy of conversion of a solar cell n-SiC/p-SiC with different materials for the anti-reflecting layer ZnO and SnO2.with the SCAPS (a Solar Cell Capacitance Simulator) computer code in one dimension, the results obtained after optimization.