材料科学
镍
兴奋剂
杂质
硅
开路电压
能量转换效率
光电子学
吸气剂
短路
电压
冶金
化学
电气工程
有机化学
工程类
作者
М. К. Бахадырханов,С. Б. Исамов,Z. T. Kenzhaev,S. Koveshnikov
出处
期刊:Technical Physics Letters
[Springer Nature]
日期:2019-10-01
卷期号:45 (10): 959-962
被引量:11
标识
DOI:10.1134/s1063785019100031
摘要
It has been shown that the doping of the front side of a solar cell with a deep-level p–n junction with nickel atoms increases short-circuit current density Jsc by 89% and open-circuit voltage Voc by 19.7%. Additional thermal treatment at 700°C for 1 h increases Jsc by 98.4% and Voc by 13.18%. It is presumed that the IR radiation conversion efficiency grows because nickel atoms form clusters, these being getter centers for uncontrolled recombinant impurities.
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