Parameter ranges for ultrahigh frequency mode locking of semiconductor lasers
作者
J. Palaski,Kam Y. Lau
出处
期刊:Applied Physics Letters [American Institute of Physics] 日期:1991-07-01卷期号:59 (1): 7-9被引量:47
标识
DOI:10.1063/1.105529
摘要
The inclusion of an intracavity saturable absorber for ultrahigh-frequency passive mode locking of semiconductor lasers also produces intensity self-pulsation in many instances. We examined experimentally and theoretically the deleterious effect of self-pulsation on ultrahigh-frequency mode locking, and arrived at the conclusion that lasers with high reflectivity coatings can most reliably achieve mode locking without being adversely affected by self-pulsation.