Bipolar resistive switching behaviours of perovskite CaBi4Ti4O15 thin films

The perovskite CaBi4Ti4O15 thin film for resistive random access memory device application has been investigated in this work. Experimentally, the CaBi4Ti4O15 thin films were deposited on the indium-tin oxide/glass substrates by radio-frequency (RF) magnetron sputtering and then annealed by rapid thermal annealing. The annealing effects on the bipolar resistive switching behaviours and the conduction mechanisms of the Al/CaBi4Ti4O15/indium-tin oxide resistive random access memory structure with a compliance current of 0·1 A were discussed in this work. The results show a stable bipolar resistive switching with a retention time of over 1 × 104 s and a high resistance state/low resistance state ratio larger than 5 × 102.