A novel low-frequency PIN diode

This paper describes computer simulation results of a novel multilayer PIN diode suitable for the high-power low-frequency application. On the other hand the use of this diode in the microwave region allows one to decrease the DC reverse bias voltage. The novel diode is composed of p/sup +/ and n/sup +/ semiconductor layers separated by composite intrinsic region n-n/sup -/, forming a p/sup +/-n-n/sup -/-n/sup +/ structure. It may be considered as a PIN diode.