Preparation and properties of AlN (aluminum nitride) powder/thin films by single source precursor

The precursor hexa urea aluminate( iii ) was pyrolysed at various temperature (800 °C to 1000 °C) and pressure (100 Torr to 1 Torr) under inert atmosphere to study the effect of temperature, pressure and inert gases for the conversion of precursor to AlN material/thin films.