Resistive nonvolatile static random access memory (SRAM) can preserve data in power down mode and provide fast power-on speed. A resistive nonvolatile 8T (Rnv8T) SRAM cell consists of a 6T SRAM cell, two memristive devices, and two transistors. RAM faults and memristor-related faults should be considered for the testing and diagnosis of Rnv8T SRAMs. In this paper, a diagnosis methodology is proposed to distinguish RAM faults and memristor-related faults.