Understanding High Temperature Static and Dynamic Characteristics of 1.2 kV SiC Power MOSFETs

High temperature capability of silicon carbide (SiC) power MOSFETs is becoming more important as power electronics faces wider applications in harsh environments. In this paper, comprehensive static and dynamic parameters of 1.2 kV SiC MOSFETs have been measured up to 250°C. The electrical behaviors with the temperature have been analyzed using the basic device physics and analytical models.