Ultra-low dynamic ON-resistance increase of 0.6% under 600 V of GaN power HEMTs by LPCVD/ICPCVD bilayer passivation and single-field-plate structure

This work demonstrates 650 V-class single-field-plate gallium nitride (GaN) high-electron-mobility transistors incorporating a low pressure chemical vapor deposition (LPCVD)/inductively coupled plasma chemical vapor deposition (ICPCVD) bilayer passivation. Under 600 V OFF-state stress, the devices achieve an ultra-low median dynamic ON-resistance increase of only 0.6% across ten devices. Such superior performance originates from the high-quality LPCVD SiN interface, low-ion-damage ICPCVD deposition, and effective electric field management of the single field plate. This stacked passivation strategy shows great promise for high-performance GaN power devices in high-efficiency power conversion applications.