Reliability of Organic Field‐Effect Transistors

Abstract In this article, we review current understanding of the reliability of organic field‐effect transistors, with a particular focus on degradation of device characteristics under bias stress conditions. We discuss the various factors that have been found to influence the operational stability of different material systems, including dependence on stress voltage and duty cycle, gate dielectric, environmental conditions, light exposure, and contact resistance. A key question concerns the role of extrinsic factors, such as oxidation or presence of moisture, and that of intrinsic factors, such as the inherent structural and electronic disorder that is present in thin organic semiconductor films. We also review current understanding of the microscopic defects that could play a role in charge trapping in organic semiconductors.