材料科学
薄膜
电导率
纳米技术
导电体
柔性电子器件
金属有机骨架
光电子学
复合材料
吸附
物理化学
有机化学
化学
作者
Taehoon Lee,Jin‐Oh Kim,Chungseong Park,Hanul Kim,Min Gyu Kim,Hyunmin Park,Ikjin Kim,Jaehyun Ko,Kyusoon Pak,Siyoung Q. Choi,Il‐Doo Kim,Steve Park
标识
DOI:10.1002/adma.202107696
摘要
Abstract Iminosemiquinone‐linker‐based conductive metal–organic frameworks (c‐MOFs) have attracted much attention as next‐generation electronic materials due to their high electrical conductivity combined with high porosity. However, the utility of such c‐MOFs in high‐performance devices has been limited to date by the lack of high‐quality MOF thin‐film processing. Herein, a technique known as the microfluidic‐assisted solution shearing combined with post‐synthetic rapid crystallization (MASS‐PRC) process is introduced to generate a high‐quality, flexible, and transparent thin‐film of Ni3(hexaiminotriphenylene)2 (Ni3(HITP)2) uniformly over a large‐area in a high‐throughput manner with thickness controllability down to tens of nanometers. The MASS‐PRC process utilizes: 1) a micromixer‐embedded blade to simultaneously mix and continuously supply the metal–ligand solution toward the drying front during solution shearing to generate an amorphous thin‐film, followed by: 2) immersion in amine solution for rapid directional crystal growth. The as‐synthesized c‐MOF film has transparency of up to 88.8% and conductivity as high as 37.1 S cm−1. The high uniformity in conductivity is confirmed over a 3500 mm2 area with an arithmetic mean roughness (Ra) of 4.78 nm. The flexible thin‐film demonstrates the highest level of transparency for Ni3(HITP)2 and the highest hydrogen sulfide (H2S) sensing performance (2,085% at 5 ppm) among c‐MOFs‐based H2S sensors, enabling wearable gas‐sensing applications.
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