An approach to enhance memory retention capacity in MFIS structures using different insulating buffer layer

We present a comparative study on the investigation of memory hysteresis and leakage current characteristics of the MFIS structure with Lead-Zirconate-Titanate (100 nm) and different insulating layers of thickness 5 nm. Effect of introducing buffer layer grown/deposited by different technique and processed under different conditions has been observed. For SiO2, Si3N4 and HfO2 layers, the memory window reduces from 6.5 to 4 V at the annealing temperature of 500°C. XRD data indicates phase change in deposited PZT film from tetrahedral to rhombohedral. Multiple angle ellipsometry indicates an increase in refractive index of the deposited HfO2 and PZT films with annealing temperature.