异质结
材料科学
光电流
光电子学
光电探测器
紫外线
费米气体
纳米技术
电子
物理
量子力学
作者
Yi‐Yu Zhang,Yixiong Zheng,Junyu Lai,Jung‐Hun Seo,Kwang Hong Lee,Chuan Seng Tan,Shu An,Sangho Shin,Bongkwon Son,Munho Kim
出处
期刊:ACS Nano
[American Chemical Society]
日期:2021-04-28
卷期号:15 (5): 8386-8396
被引量:68
标识
DOI:10.1021/acsnano.0c10374
摘要
Interdigitated photodetectors (IPDs) based on the two-dimensional electron gas (2DEG) at the AlGaN/GaN interface have gained prominence as high sensitivity ultraviolet (UV) PDs due to their excellent optoelectronic performance. However, most 2DEG-IPDs have been built on rigid substrates, thus limiting the use of 2DEG-IPDs in flexible and wearable applications. In this paper, we have demonstrated high performance flexible AlGaN/GaN 2DEG-IPDs using AlGaN/GaN 2DEG heterostructure membranes created from 8 in. AlGaN/GaN on insulator (AlGaN/GaNOI) substrates. The interdigitated AlGaN/GaN heterostructure has been engineered to reduce dark current by disconnecting the conductive channel at the heterostructure interface. Photocurrent has been also boosted by the escaped carriers from the 2DEG layer. Therefore, the utilization of a 2DEG layer in transferrable AlGaN/GaN heterostructure membranes offers great promises for high performance flexible 2DEG-IPDs for advanced UV detection systems that are critically important in myriad biomedical and environmental applications.
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