化学气相沉积
金属有机气相外延
单层
材料科学
成核
钼
薄脆饼
二硫化钼
基质(水族馆)
纳米技术
薄膜
化学工程
光电子学
化学
外延
图层(电子)
复合材料
冶金
有机化学
海洋学
地质学
工程类
作者
Xu Yang,Shisheng Li,Naoki Ikeda,Akihiro Ohtake,Yoshiki Sakuma
标识
DOI:10.1016/j.apsusc.2023.157756
摘要
To bring atomically thin transition metal dichalcogenides (TMDs) to practical application, a highly reproducible process to grow them over a large scale is indispensable. Here, we develop a carbon-free reproducible route for the scalable growth of high-quality monolayer MoS2 by selecting molybdenum dichloride dioxide (MoO2Cl2) as the Mo source and integrating the precursor with a standard low-pressure cold-wall metalorganic chemical vapor deposition (MOCVD) system. Specifically, combined with H2S as the sulfur source and using catalytic Dragontrail glass (DT-glass) as the main substrate, we investigate the effect of MoO2Cl2 flux, temperature, and deposition time on the growth, confirming MoO2Cl2 with reasonably high vapor pressure is well compatible with the MOCVD system that enables precise control of sources for uniform nucleation and growth of MoS2 over a large area. We successfully demonstrate the growth of carbon-free MoS2 monolayers on DT-glass with decent crystalline, optical, and electrical properties. Additionally, the initial attempts also manifest that the proposed strategy could be generalized for growing ultrathin MoS2 on other technologically important substrates, such as SiO2/Si and quartz, exhibiting superior optical quality and wafer-scale uniformity. This work provides a new avenue for the large-scale production of high-quality MoS2 monolayers and facilitates their use in practical applications.
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