Superior self-powered infrared photodetector via semiconducting graphene-nanoribbons-based vertical heterojunctions

Self-powered photodetectors, operating without an external power source, have garnered extensive interest for infrared (IR) detection owing to their vast potential in low-power consumption sensor systems. Here, a short-wavelength infrared (SWIR) heterojunction photodetector utilizing semiconducting graphene nanoribbons has been achieved and demonstrated record-high performance. In the self-powered mode, the heterojunction photodetector presents a responsivity of 73.5 A/W and a detectivity of 7.5 × 1014 Jones, surpassing previously reported self-powered IR photodetectors by several orders of magnitude. The superior performance is primarily due to the enhancement of the electric field caused by the photogating effect at the heterointerface. The device also displays unparalleled performance at −5 V bias voltage, achieving a responsivity of 843 A/W, a detectivity of 1015 Jones, and an external quantum efficiency of 105%, all of which are record-breaking values for SWIR photodetectors to date. Therefore, our approach provides new insight and demonstrates great potential for future high-performance low-power consumption IR detection technology.