响应度
材料科学
光电子学
高电子迁移率晶体管
光电探测器
紫外线
晶体管
制作
电子迁移率
电压
物理
医学
替代医学
量子力学
病理
作者
Haodong Wang,Meixin Feng,Yaozong Zhong,Xin Chen,Hongwei Gao,Ercan Yılmaz,Qian Sun,Hui Yang
出处
期刊:ACS Photonics
[American Chemical Society]
日期:2023-12-21
卷期号:11 (1): 180-186
被引量:1
标识
DOI:10.1021/acsphotonics.3c01261
摘要
In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination. The design of the novel device structure introduces double two-dimensional electron gas channels, which remarkably improve the effectiveness in the collection of photogenerated carriers and make it work as a two-terminal normally off device. The device exhibited a high responsivity of 2.1 × 107 A/W and a high specific detectivity of 1.7 × 1015 Jones under the illumination of 9.7 μW/cm2, indicating the excellent capability of detecting an ultraweak signal. Meanwhile, a distinguished transient performance was also observed when it operated under 500 Hz pulse illumination. Combining fabrication conciseness and outstanding performance advantages, the proposed AlGaN/GaN double-channel HEMT UV PD shows promising potential in the development of next-generation UV PDs.
科研通智能强力驱动
Strongly Powered by AbleSci AI