Comprehensive Optical Band‐Edge Characterization for Multilayered MoTe 2 and Its Application in van der Waals‐Stacked Heterojunction Devices (Small 42/2025)

Heterojunction Devices In article number 2503542, Ching-Hwa Ho and co-workers highlight opto-excitonic properties of 2H-MoTe2 and its applications in heterojunction devices. This work incorporates multiple visual elements to illustrate key research insights. The laboratory background emphasizes experimental basis, while the foreground depicts the stacking of layered 2D materials on a Si/SiO2 substrate, forming a p-n heterojunction between p-type SnS and n-type MoTe2.