Modeling and Simulation for DRAM and Flash Memory Technology Exploration and Development

Modeling and simulation is increasingly critical to memory technology exploration and development, as relentless scaling demands innovation, pushes the limits of physics, and increases the risk and cost of making architectural choices. Examples are given to demonstrate the value of multiscale, multi-physics modeling of complex problems, including a) row hammer and 4F2 floating body effects in DRAM; b) RTN and program noise in 3D NAND; c) 3D unit process, integration, and wafer warpage; and d) Vth engineering at the atomic level.