InGaN/GaN edge emitting laser diodes using an epitaxial lateral overgrowth with a low-defect density area of more than 75%

Abstract We have successfully demonstrated InGaN/GaN edge-emitting laser diodes (EELDs) on a fully coalesced epitaxial lateral overgrown film from a c-plane GaN substrate. We achieve a high aspect ratio, low defect density wing region covering 75% –88% of the substrates’ surface, which is amongst the largest reported area in the literature. The devices at the wing region exhibit a threshold current density of 3.63 kA/cm² at 408 nm, and an improved laser performance compared to the high defect density region is confirmed. Based on this work, it is promising that high performance, cost-efficient c-plane InGaN/GaN EELDs can be realized.