Anisotropy of the hopping magnetoresistance of antiferromagnetic La2CuO4+δ single crystals
作者
Б. И. Белевцев,Н. В. Далакова,A. S. Panfilov,I. S. Braude,A. V. Bondarenko
出处
期刊:Low Temperature Physics [American Institute of Physics] 日期:2003-04-01卷期号:29 (4): 300-304被引量:2
标识
DOI:10.1063/1.1542472
摘要
The anisotropy of the hopping conductivity of antiferromagnetic La2CuO4+δ single crystals with TN≈188 K is investigated in the temperature range 5–295 K and the anisotropy of their magnetoresistance, in the temperature range 5–55 K. The resistance is measured by the Montgomery method for different combinations of directions of the transport current and magnetic field relative to the crystallographic axes. For the case when the field and transport current are directed parallel to the CuO2 layers, a transition from negative to positive magnetoresistance is observed when the temperature is raised to T≈20 K. For fields perpendicular to the CuO2 layers, only negative magnetoresistance is observed. The nature of the positive magnetoresistance is discussed. It is shown that the effect is most likely due not to the interaction of the spin of the charge carriers with the surrounding magnetic medium but to the orbital motion of these carriers. The corresponding values of the positive magnetoresistance and its behavior as a function of magnetic field and temperature are found using the well-known model of Shklovskii and Efros, which is based on taking into account the compression of the impurity wave functions of the charge carriers in the magnetic field.