Activation of high-temperature-implanted phosphorus atoms in 4H-SiC by atmospheric pressure thermal plasma jet annealing

In this study, the application of atmospheric pressure thermal plasma jet (TPJ) annealing for impurity activation in 4H-SiC is reported. The activation of phosphorus atoms implanted at 300°C in 4H-SiC by TPJ irradiation and analysis of its crystallinity are investigated. At the maximum annealing temperature of 1630°C, the minimum resistivity value is 3.1 mΩ·cm and the maximum free electron concentration value is 2.0 χ 10 ²⁰ cm ^-3 . Crystal orientation analysis suggests that the sample implanted at 300°C was recrystallized to a 4H-SiC(0001) structure after 1630°C annealing. Furthermore, a significant increase in the carrier concentration was observed with the increasing cooling rate during the activation annealing process. Rapid cooling may suppress the impurity deactivation. These results suggest that short-time high-temperature TPJ irradiation annealing is effective for P dopant activation in 4H-SiC.