密度泛函理论
表面改性
X射线光电子能谱
纳米技术
电子结构
吸附
费米能级
带隙
作者
Shaobin Tang,Weihua Wu,Shi‐Yong Zhang,Dong‐Nai Ye,Ping Zhong,Xiaokang Li,Liangxian Liu,Yafei Li
摘要
A N-doped GO support effectively tunes the activity of the inert MoS 2 surface towards chemical functionalization and the hydrogen evolution reaction (HER).
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