X射线光电子能谱
原子层沉积
薄脆饼
杂质
分析化学(期刊)
图层(电子)
沉积(地质)
薄膜
等离子体
材料科学
光谱学
化学
纳米技术
化学工程
有机化学
量子力学
生物
物理
工程类
古生物学
沉积物
作者
Jin Yong Lee,Daewoong Kim,Woo Dae Kang,Jae Sung Lee,Min Sup Hur,Sung Koo Han
标识
DOI:10.1088/1361-6463/aa9941
摘要
Differences in the physical and chemical properties of Al2O3 films on a Si wafer and a C x H y layer were investigated in the case of plasma-enhanced atomic layer deposition. The Al2O3 film on the Si had a sharper interface and lower thickness than the Al2O3 film on the C x H y . The amount of carbon-impurity near the interface was larger for Al2O3 on the C x H y than for Al2O3 on the Si. In order to understand these differences, the concentrations of Al, O, C, and Si atoms through the Al2O3 films were evaluated by using x-ray photoelectron spectroscopy (XPS) depth profiling. The emission intensities of CO molecule were analyzed for different numbers of deposition cycles, by using time-resolved optical emission spectroscopy (OES). Finally, a growth mechanism for Al2O3 on an organic layer was proposed, based on the XPS and OES results for the Si wafer and the C x H y layer.
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