Room Temperate Bonding of Al2O3 Layers by Atomic Layer Deposition on Polyimide Substrates

Room temperature bonding of Al 2 O 3 layers deposited by Atomic Layer Deposition (ALD) was studied for gas diffusion barrier structures on polymer films. A modified method of the surface activated bonding (SAB) was applied for the bonding of ALD Al 2 O 3 coated polyimide sheets. ALD deposition was performed at different process temperatures of 80, 150 and 250 ºC. The results of AFM surface profile demonstrate that samples prepared at a higher temperature in ALD process exhibit a rougher surface. Also, polymer films processed at high temperature suffer larger warpage. The size of the bonded area was optimized when the ALD synthesis of Al 2 O 3 was performed at 80ºC, leaving only a small, unbonded area.