Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

The effect of the growth temperature (Tg) on photoluminescence of Ge(Si) self-assembled islands embedded between tensile-strained Si layers was studied. The observed redshift of the photoluminescence peak of the dome islands with a decrease of Tg from 700to630°C is associated with an increase of Ge content in the islands and with the suppression of smearing of the strained Si layers. The blueshift of the photoluminescence peak with a decrease of Tg from 630to600°C is associated with a change of the type of islands on surface, which is accompanied by a decrease in islands’ height.